7MBR35SB140 igbt modules applications inverter for motoe drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c unless without specified) item symbol condition rating unit collector-emitter voltage gate-emitter voltage collector current collector power disspation collector-emitter voltage gate-emitter voltage collector current collector power disspation repetitive peak reverse voltage repetitive peak reverse voltage average output current surge current (non-repetitive) i 2 t (non-repetitive) converter brake inverter operating junction temperature storage temperature isolation between terminal and copper base *2 voltage between thermistor and others *3 mounting screw torque v ces v ges i c i cp -i c p c v ces v ges i c i cp p c v rrm v rrm i o i fsm i 2 t t j t stg v iso continuous tc=25c tc=75c 1ms tc=25c tc=75c 1 device continuous tc=25c tc=75c 1ms tc=25c tc=75c 1 device 50hz/60hz sine wave tj=150c, 10ms half sine wave ac : 1 minute 1400 20 50 35 100 70 35 240 1400 20 35 25 70 50 180 1400 1600 35 360 648 +150 -40 to +125 ac 2500 ac 2500 3.5 * 1 v v a a a w v v a a w v v a a a 2 s c c v nm *1 recommendable value : 2.5 to 3.5 nm (m5) *2 all terminals should be connected together when isolation test will be done. *3 terminal 8 and 9 should be connected together. terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. igbt module (s series) 1400v / 35a / pim features
electrical characteristics (tj=25c unless otherwise specified) item symbol condition characteristics unit min. typ. max. zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance turn-on time turn-off forward on voltage reverse recovery time of frd zero gate voltage collector current gate-emitter leakage current collector-emitter saturation voltage turn-on time turn-off time reverse current forward on voltage reverse current resistance b value converter brake inverter i ces i ges v ge(th) v ce(sat) c ies t on t r t r(i) t off t f v f t rr i ces i ges v ce(sat) t on t r t off t f i rrm v fm i rrm r b v ce =1400v, v ge =0v v ce =0v, v ge =20v v ce =20v, i c =35ma v ge =15v, ic=35a chip terminal v ge =0v, v ce =10v, f=1mhz v cc =800v i c =35a v ge =15v r g =33 ? i f =35a chip terminal i f =35a v ces =1400v, v ge =0v v ce =0v, v ge =20v i c =25a, v ge =15v chip terminal v cc =800v i c =25a v ge =15v r g =51 ? v r =1400v i f =35a chip terminal v r =1600v t=25c t=100c t=25/50c 1.0 0.2 8.5 2.7 1.2 0.6 1.0 0.3 3.4 0.35 1.0 0.2 2.8 1.2 0.6 1.0 0.3 1.0 1.5 1.0 4200 5.5 7.2 ma a v v pf s v s ma a v s ma v ma ? k item symbol condition characteristics unit min. typ. max. inverter igbt inverter fwd brake igbt converter diode with thermal compound 0.52 0.90 0.69 c/w 0.75 0.05 thermal resistance ( 1 device ) rth(j-c) contact thermal resistance * rth(c-f) thermal resistance characteristics igbt module 7MBR35SB140 * this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic 2.2 2.35 0.35 0.25 0.1 0.45 0.08 2.4 2.55 2.2 2.35 0.35 0.25 0.45 0.08 1.1 1.2 5000 465 495 520 3305 3375 3450 [converter] 21(p) 23(n) 1(r) 2(s) 3(t) [brake] [inverter] 22(p1) 7(b) 14(gb) 24(n1) 20(gu) 19(eu) 13(gx) 18(gv) 17(ev) 4(u) 12(gy) 5(v) 6(w) 16(gw) 11(gz) 10(en) 15(ew)
igbt module 7MBR35SB140 characteristics (representative) 012345 0 20 40 60 80 8v 10v 12v 15v vge= 20v [ inverter ] collector current vs. collector-emitter voltage tj= 25c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 20 40 60 80 8v 10v 12v 15v vge= 20v [ inverter ] collector current vs. collector-emitter voltage tj= 125c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 012345 0 20 40 60 80 tj= 25c tj= 125c [ inverter ] collector current vs. collector-emitter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 1 01 52 02 5 0 2 4 6 8 10 ic= 17.5a ic= 35a ic= 70a [ inverter ] collector-emitter voltage vs. gate-emitter voltage tj= 25c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 100 1000 10000 [ inverter ] capacitance vs. collector-emitter voltage (typ.) vge=0v, f= 1mhz, tj= 25c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 100 200 300 400 0 200 400 600 800 1000 [ inverter ] dynamic gate charge (typ.) vcc=800v, ic=35a, tj= 25c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25
igbt module 7MBR35SB140 02 04 06 0 50 100 500 1000 ton tr toff tf [ inverter ] switching time vs. collector current (typ.) vcc=800v, vge=15v, rg= 33 ohm, tj= 25c switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] 0 2 04 06 0 50 100 500 1000 tf tr ton toff [ inverter ] switching time vs. collector current (typ.) vcc=800v, vge=15v, rg= 33 ohm, tj= 125c collector current : ic [ a ] switching time : ton, tr, toff, tf [ nsec ] 10 50 100 500 50 100 500 1000 5000 toff ton tr tf [ inverter ] switching time vs. gate resistance (typ.) vcc=800v, ic=35a, vge=15v, tj= 25c gate resistance : rg [ ohm ] switching time : ton, tr, toff, tf [ nsec ] 0 2 04 06 0 0 2 4 6 8 10 12 14 err(25c) eoff(25c) eon(25c) err(125c) eoff(125c) eon(125c) [ inverter ] switching loss vs. collector current (typ.) vcc=800v, vge=15v, rg=33 ohm switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] 10 50 100 500 0 5 10 15 20 25 [ inverter ] switching loss vs. gate resistance (typ.) vcc=800v, ic=35a, vge=15v, tj= 125c switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ ohm ] eon err eoff 0 200 400 600 800 1000 1200 1400 1600 0 20 40 60 80 100
igbt module 7MBR35SB140 01234 0 20 40 60 80 tj=25c tj=125c [ inverter ] forward current vs. forward on voltage (typ.) forward current : if [ a ] forward on voltage : vf [ v ] 0 102030405060 10 100 300 irr(125c) irr(25c) trr(25c) trr(125c) [ inverter ] reverse recovery characteristics (typ.) vcc=800v, vge=15v, rg=33 ohm forward current : if [ a ] reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 tj= 25c tj= 125c [ converter ] forward current vs. forward on voltage (typ.) forward on voltage : vfm [ v ] forward current : if [ a ] 0.001 0.01 0.1 1 0.01 0.1 1 5 igbt[brake] transient thermal resistance thermal resistanse : rth(j-c) [ c/w ] pulse width : pw [ sec ] fwd[inverter] conv. diode igbt[inverter] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.1 1 10 100 200
igbt module 7MBR35SB140 012345 0 10 20 30 40 50 60 8v 10v 12v 15v vge= 20v [ brake ] collector current vs. collector-emitter voltage tj= 25c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 10 20 30 40 50 60 8v 10v 12v 15v vge= 20v [ brake ] collector current vs. collector-emitter voltage tj= 125c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 012345 0 10 20 30 40 50 60 tj= 25c tj= 125c [ brake ] collector current vs. collector-emitter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 1 01 52 02 5 0 2 4 6 8 10 ic= 12.5a ic= 25a ic= 50a [ brake ] collector-emitter voltage vs. gate-emitter voltage tj= 25c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 100 1000 10000 [ brake ] capacitance vs. collector-emitter voltage (typ.) vge=0v, f= 1mhz, tj= 25c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 50 100 150 200 250 0 200 400 600 800 1000 [ brake ] dynamic gate charge (typ.) vcc=800v, ic=25a, tj= 25c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25
igbt module 7MBR35SB140 outline drawings, mm mass : 260g
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